1 of 2 features maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified mechanical data k l m j c h ba sod-323 dim min max a 0.25 0.35 b 1.20 1.40 c 2.30 2.70 h 1.60 1.80 j 0.00 0.10 k 1.0 1.1 l 0.20 0.40 m 0.10 0.15 0 8 all dimensions in mm case: sod323 plastic case weight: approx. 4.3 mg packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/3 k per 7" reel (8 mm tape), 15 k/box component in accordance to rohs 2002/95/ec lead (pb)-free component fast switching diodes silicon epitaxial planar diode these diodes are also available in other case styles including the do35 case with the type designation 1n4148, the minimelf case with the type designation ll4148, and the sot23 case with the type designation imbd4148-v and weee 2002/96/ec note: 1) valid provided that electrodes ar e kept at ambient temperature. parameter test condition symbol value unit reverse voltage v r 75 v repetitive peak reverse voltage v rrm 100 v average rectified current half wave rectification with resistive load f 50 hz i f(av) 150 1) ma surge forward current t < 1 s and t j = 25 c i fsm 350 ma power dissipation p tot 200 1) mw parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1000 mv i f = 100 ma v f 1200 mv leakage current v r = 20 v i r 25 na v r = 75 v i r 5a v r = 100 v i r 100 a v r = 20 v, t j = 150 c i r 50 a diode capacitance v f = v r = 0 v c d 4pf voltage rise when switching on (tested with 50 ma pulses) tested with 50 ma pulses, t p = 0.1 s, rise time < 30 ns, f p = (5 to 100) khz v fr 2.5 v reverse recovery time i f = 10 ma, i r = 1 ma, v r = 6 v, r l = 100 t rr 4ns rectification efficiency f = 100 mhz, v rf = 2 v ? 0.45 1N4148WS-V 150ma surface mount small signal fast switching diode
figure 1. forward characteristics figure 2. dynamic forward resistance vs. forward current figure 3. admissible power dissi pation vs. ambient temperature 17437 0 1 2 v f ( v ) i f (ma) 10 -1 10 -2 1 10 10 2 10 3 t j = 100 c t j = 25 c 1743 8 f = 1 khz t j = 25 c i f (ma) r f ( ) 10 10 2 10 3 10 4 10 -2 10 -1 110 2 10 2 5 2 5 2 5 2 5 0 50 100 150 200 250 0 50 100 150 200 20324 t am b - am b ient temperat u re (c) p tot - po w er dissipation (m w ) figure 4. relative capacitance vs. reverse voltage figure 5. leakage current vs . junction temperature 17440 v r ( v ) 0.7 0. 8 0.9 1.0 1.1 f = 1 mhz t j = 25 c 2 0 8 6 410 c d ( v r ) c d (0 v ) 17441 t j (c) i r (na) 10 10 2 10 3 10 4 100 200 2 5 2 5 2 5 2 5 v r = 20 v 1 0 figure 6. admissible repetitive peak forward current vs. pulse duration 17442 t p (s) i frm (a) 100 1 3 5 10 -5 10 -4 10 -3 10 10 -1 10 -2 25 2 5 25 25 25 25 2 4 10 3 5 2 4 1 3 5 2 4 0.1 i i frm t v = t p /t t = 1/f p t t p v = 0 0.1 0.2 0.5 2of2
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